Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment

ABSTRACT

A substrate support in a substrate processing system includes an inner portion and an outer portion. The inner portion is positioned below a gas distribution device configured to direct first process gases toward the inner portion. The outer portion includes an edge ring positioned around an outer perimeter of the inner portion to at least partially surround the inner portion and a substrate arranged on the inner portion. The edge ring is configured to be raised and lowered relative to the inner portion, and to direct second process gases toward the inner portion. A controller determines distribution of material deposited on the substrate during processing and, based on the determined distribution, selectively adjusts a position of the edge ring and selectively adjusts flow of at least one of the first process gases and the second process gases.

FIELD

The present disclosure relates to substrate processing, and moreparticularly to systems and methods for controlling etch uniformity insubstrate processing.

BACKGROUND

The background description provided here is for the purpose of generallypresenting the context of the disclosure. Work of the presently namedinventors, to the extent it is described in this background section, aswell as aspects of the description that may not otherwise qualify asprior art at the time of filing, are neither expressly nor impliedlyadmitted as prior art against the present disclosure.

Substrate processing systems may be used to treat substrates such assemiconductor wafers. Example processes that may be performed on asubstrate include, but are not limited to, chemical vapor deposition(CVD), atomic layer deposition (ALD), conductor etch, and/or other etch,deposition, or cleaning processes. A substrate may be arranged on asubstrate support, such as a pedestal, an electrostatic chuck (ESC),etc. in a processing chamber of the substrate processing system. Duringetching, gas mixtures including one or more precursors may be introducedinto the processing chamber and plasma may be used to initiate chemicalreactions.

The substrate support may include a ceramic layer arranged to support awafer. For example, the wafer may be clamped to the ceramic layer duringprocessing. The substrate support may include an edge ring arrangedaround an outer portion (e.g., outside of and/or adjacent to aperimeter) of the substrate support. The edge ring may be provided toconfine plasma to a volume above the substrate, protect the substratesupport from erosion caused by the plasma, etc.

SUMMARY

A substrate support in a substrate processing system includes an innerportion and an outer portion. The inner portion is positioned below agas distribution device configured to direct first process gases towardthe inner portion. The outer portion includes an edge ring positionedaround an outer perimeter of the inner portion to at least partiallysurround the inner portion and a substrate arranged on the innerportion. The edge ring is configured to be raised and lowered relativeto the inner portion, and to direct second process gases toward theinner portion. A controller determines distribution of materialdeposited on the substrate during processing and, based on thedetermined distribution, selectively adjusts a position of the edge ringand selectively adjusts flow of at least one of the first process gasesand the second process gases.

A method for processing a substrate in a substrate processing systemincludes providing a substrate support having an inner portion and anouter portion. The inner portion positioned below a gas distributiondevice, and the outer portion includes an edge ring positioned around anouter perimeter of the inner portion to at least partially surround theinner portion and a substrate arranged on the inner portion. The methodfurther includes directing first process gases toward the inner portionusing the gas distribution device, directing second process gases towardthe inner portion using the edge ring, determining distribution ofmaterial deposited on the substrate during processing, selectivelyadjusting a position of the edge ring upward or downward relative to theinner portion, and selectively adjusting flow of at least one of thefirst process gases and the second process gases.

Further areas of applicability of the present disclosure will becomeapparent from the detailed description, the claims and the drawings. Thedetailed description and specific examples are intended for purposes ofillustration only and are not intended to limit the scope of thedisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will become more fully understood from thedetailed description and the accompanying drawings, wherein:

FIG. 1 is a functional block diagram of an example processing chamberaccording to the present disclosure;

FIG. 2A shows example by-product distributions across a substrate forcenter-injected process gases according to the present disclosure;

FIG. 2B shows example by-product distributions across a substrate forside-injected process gases according to the present disclosure;

FIG. 3 shows an example control range and average profile of theby-product distribution of center-injected process gases andside-injected process gases according to the present disclosure;

FIG. 4A shows an example variable depth edge ring in a lowered positionaccording to the present disclosure;

FIG. 4B shows an example variable depth edge ring in a raised positionaccording to the present disclosure;

FIGS. 5A and 5B show an example edge ring including edge ring gasinjection nozzles according to the present disclosure; and

FIG. 6 shows steps of an example method for controlling by-productdistribution across a substrate according to the present disclosure.

In the drawings, reference numbers may be reused to identify similarand/or identical elements.

DETAILED DESCRIPTION

A substrate support in a substrate processing system may include an edgering. An upper surface of the edge ring may extend above an uppersurface of the substrate support, causing the upper surface of thesubstrate support (and, in some examples, an upper surface of asubstrate arranged on the substrate support) to be recessed relative tothe edge ring. This recess may be referred to as a pocket. A distancebetween the upper surface of the edge ring and the upper surface of thesubstrate may be referred to as a “pocket depth.” Generally, the pocketdepth is fixed according to a height of the edge ring relative to theupper surface of the substrate. If a different pocket depth is required,the edge ring must be manually replaced, which may be limited by waferhandling constraints, process constraints, chamber constraints, etc.

Some aspects of etch processing may vary due to characteristics of thesubstrate processing system, the substrate, gas mixtures, etc. Forexample, flow patterns, and therefore an etch rate and etch uniformity,may vary according to the pocket depth of the edge ring, edge ringgeometry (i.e., shape), etc. In some example processes, overall etchrates vary as the distance between the upper surface of the substrateand the bottom surface of the gas distribution device increases.Further, the etch rates may vary from the center of the substrate to anouter perimeter of the substrate. For example, at an outer perimeter ofthe substrate, sheath bending and ion tilt can cause shallow trenchisolation (STI) tilt, and chemical loading associated with reactivespecies (e.g., etchants and/or deposition precursors) can cause hardmask critical dimension roll off. Further, material such as etchby-products can be re-deposited on the substrate. Etch rates may varyaccording to other process parameters including, but not limited to, gasvelocities across the upper surface of the substrate. For example,parameters associated with the injection of various process gases (e.g.,including injection from center nozzles, side tuning nozzles, etc.) thatmay affect process results include, but are not limited to, gas flowrates, gas species, injection angle, injection position, etc.

Accordingly, varying the configuration of the edge ring (e.g., includingedge ring height and/or geometry) may modify the gas velocity profileacross the surface of the substrate. Similarly, adjusting parametersassociated with the injection of various process gases may also affectprocess results. For example only, gas injection parameters may include,but are not limited to, gas flow, gas species, injection angle,injection position, etc. Variable depth edge ring systems and methodsaccording to the principles of the present disclosure combine adjustingthe edge ring height and adjusting the parameters of process gasinjection during substrate processing to control etch uniformity. Inthis manner, gas flow recirculation and the associated by-productdeposition can be modulated.

For example, the edge ring may be coupled to an actuator configured toraise and lower the edge ring in response to a controller, userinterface, etc. In one example, a controller of the substrate processingsystem controls the height of the edge ring during a process, betweenprocess steps, etc. according to a particular recipe being performed andassociated gas injection parameters. The controller may be configured toadjust gas injection parameters accordingly. For example only, thecontroller may store data (e.g., a lookup table) that indexes edge ringheight, etc. to one or more parameters associated with process gasinjection. The data may further associate the edge ring height and gasinjection parameters with etch by-product distribution across thesubstrate. The data may correspond to predetermined (e.g., calibrated orprogrammed) data, data provided by a user via an interface, etc. In thismanner, a desired etch uniformity can be achieved by dynamicallyadjusting the edge ring height and gas injection parameters duringprocessing according to the etch by-product distribution. In someexamples, the edge ring may include gas injection nozzles for injectingadditional side tuning gases.

Referring now to FIG. 1, an example substrate processing system 100 isshown. For example only, the substrate processing system 100 may be usedfor performing etching using RF plasma and/or other suitable substrateprocessing. The substrate processing system 100 includes a processingchamber 102 that encloses other components of the substrate processingsystem 100 and contains the RF plasma. The substrate processing chamber102 includes an upper electrode 104 and a substrate support 106, such asan electrostatic chuck (ESC). During operation, a substrate 108 isarranged on the substrate support 106. While a specific substrateprocessing system 100 and chamber 102 are shown as an example, theprinciples of the present disclosure may be applied to other types ofsubstrate processing systems and chambers, such as a substrateprocessing system that generates plasma in-situ, that implements remoteplasma generation and delivery (e.g., using a plasma tube, a microwavetube), etc.

For example only, the upper electrode 104 may include a gas distributiondevice such as a showerhead 109 that introduces and distributes processgases. The showerhead 109 may include a stem portion including one endconnected to a top surface of the processing chamber. A base portion isgenerally cylindrical and extends radially outwardly from an oppositeend of the stem portion at a location that is spaced from the topsurface of the processing chamber. A substrate-facing surface orfaceplate of the base portion of the showerhead includes a plurality ofholes through which process gas or purge gas flows. Alternately, theupper electrode 104 may include a conducting plate and the process gasesmay be introduced in another manner.

The substrate support 106 includes a conductive baseplate 110 that actsas a lower electrode. The baseplate 110 supports a ceramic layer 112. Insome examples, the ceramic layer 112 may comprise a heating layer, suchas a ceramic multi-zone heating plate. A thermal resistance layer 114(e.g., a bond layer) may be arranged between the ceramic layer 112 andthe baseplate 110. The baseplate 110 may include one or more coolantchannels 116 for flowing coolant through the baseplate 110.

An RF generating system 120 generates and outputs an RF voltage to oneof the upper electrode 104 and the lower electrode (e.g., the baseplate110 of the substrate support 106). The other one of the upper electrode104 and the baseplate 110 may be DC grounded, AC grounded or floating.For example only, the RF generating system 120 may include an RF voltagegenerator 122 that generates the RF voltage that is fed by a matchingand distribution network 124 to the upper electrode 104 or the baseplate110. In other examples, the plasma may be generated inductively orremotely. Although, as shown for example purposes, the RF generatingsystem 120 corresponds to a capacitively coupled plasma (CCP) system,the principles of the present disclosure may also be implemented inother suitable systems, such as, for example only transformer coupledplasma (TCP) systems, CCP cathode systems, remote microwave plasmageneration and delivery systems, etc.

A gas delivery system 130 includes one or more gas sources 132-1, 132-2,. . . , and 132-N (collectively gas sources 132), where N is an integergreater than zero. The gas sources supply one or more precursors andmixtures thereof. The gas sources may also supply purge gas. Vaporizedprecursor may also be used. The gas sources 132 are connected by valves134-1, 134-2, . . . , and 134-N (collectively valves 134) and mass flowcontrollers 136-1, 136-2, . . . , and 136-N (collectively mass flowcontrollers 136) to a manifold 140. An output of the manifold 140 is fedto the processing chamber 102. For example only, the output of themanifold 140 is fed to the showerhead 109.

A temperature controller 142 may be connected to a plurality of heatingelements, such as thermal control elements (TCEs) 144 arranged in theceramic layer 112. For example, the heating elements 144 may include,but are not limited to, macro heating elements corresponding torespective zones in a multi-zone heating plate and/or an array of microheating elements disposed across multiple zones of a multi-zone heatingplate. The temperature controller 142 may be used to control theplurality of heating elements 144 to control a temperature of thesubstrate support 106 and the substrate 108.

The temperature controller 142 may communicate with a coolant assembly146 to control coolant flow through the channels 116. For example, thecoolant assembly 146 may include a coolant pump and reservoir. Thetemperature controller 142 operates the coolant assembly 146 toselectively flow the coolant through the channels 116 to cool thesubstrate support 106.

A valve 150 and pump 152 may be used to evacuate reactants from theprocessing chamber 102. A system controller 160 may be used to controlcomponents of the substrate processing system 100. A robot 170 may beused to deliver substrates onto, and remove substrates from, thesubstrate support 106. For example, the robot 170 may transfersubstrates between the substrate support 106 and a load lock 172.Although shown as separate controllers, the temperature controller 142may be implemented within the system controller 160. In some examples, aprotective seal 176 may be provided around a perimeter of the bond layer114 between the ceramic layer 112 and the baseplate 110.

The substrate support 106 includes an edge ring 180. The edge ring 180according to the principles of the present disclosure is moveable (e.g.,moveable upward and downward in a vertical direction) relative to thesubstrate 108. For example, the edge ring 180 may be controlled via anactuator responsive to the controller 160 as described below in moredetail. The edge ring 180 may be adjusted during substrate processing inaccordance with gas injection parameters. In some examples, the edgering 180 may include gas injection nozzles for injecting additional sidetuning gases.

Referring now to FIGS. 2A and 2B, by-product distributions across asubstrate for a raised (high) edge ring position and a lowered (low)edge ring position are shown. FIG. 2A shows by-product distributions forcenter-injected process gases (i.e., gases injected from a center orinner portion of a showerhead. A by-product distribution 200 illustratesby-product distribution (e.g., as measured in a mol fraction of SiCL4above a corresponding position of the substrate/wafer, measured in aradius of 0 to 160 mm from a center of the substrate) with the edge ringin a lowered position. Conversely, a by-product distribution 204illustrates by-product distribution with the edge ring in a raisedposition. As shown, for center-injected process gases, a greater amountof by-product is deposited near an edge region of the substrate relativeto a center region of the substrate for both lowered and raised edgering positions, but lowering the edge ring results in relatively lessby-product distribution near the edge region.

FIG. 2B shows by-product distributions for side-injected process gases(i.e., gases injected from an outer, side tuning portion of a showerheadand/or, in some examples, gases injected from edge ring nozzles asdescribed below in more detail). A by-product distribution 208illustrates by-product distribution with the edge ring in a loweredposition. Conversely, a by-product distribution 212 illustratesby-product distribution with the edge ring in a raised position. Asshown, for side-injected process gases, a greater amount of by-productis deposited near a center region of the substrate relative to an edgeregion of the substrate for both lowered and raised edge ring positions,but lowering the edge ring results in relatively less by-productdistribution near the edge region.

FIG. 3 shows an example average by-product distribution 300 ofby-product distributions 304 and 308 associated with center-injectedgases and side-injected process gases, respectively, across a radius ofa substrate. The average by-product distribution 300 may correspond toan average by-product distribution over a predetermined period (e.g.,over a predetermined period corresponding to a given processing step)for a predetermined position of the edge ring. The by-productdistributions 304 and 308 may also be associated with respectivepredetermined gas flow rates, gas species, etc. corresponding to thecenter-injected gases and the side-injected gases.

A region 312 between an upper bound 316 and a lower bound 320 maytherefore correspond to a tunable range of by-product distributionachievable by adjusting a position of (i.e., raising and lowering) theedge ring. For example, the upper bound 316 may correspond to an examplemaximum amount of by-product distribution achievable and the lower bound320 may correspond to an example minimum amount of by-productdistribution achievable. The by-product distribution may be furtheradjusted by selectively adjusting center-injected gas flow andside-injected gas flow. The edge ring height and gas flow can bedynamically adjusted during processing to achieve a desired by-productdistribution 324 for a predetermined period.

For example, the system controller 160 may store data, such as a model,that associates an average by-product distribution for each region of asubstrate with various parameters including, but not limited to, edgering position, side-injected gas flow, center-injected gas flow, gasspecies, edge ring shape, etc. The data may include data indicative ofthe by-product distributions 304 and 308 for a plurality of differentedge ring positions, process gas injection flow rates, gas species, etc.For example only, the data, including the average by-productdistributions, may be determined based on estimates, models,post-processing analyses of previous substrates, etc. Accordingly, for agiven set of parameters that are not adjustable during processing (e.g.,edge ring shape, desired by-product distribution, etc.), the controller160 is configured to calculate associated parameters that can beadjusted during processing to achieve the desired by-productdistribution (e.g., edge ring height and respective amounts ofcenter-injected and side-injected gas flow). In some examples, thecontroller 160 may dynamically calculate the by-product distributionduring processing and make adjustments accordingly. For example, asshown in FIG. 2A, for a given edge ring height, center-injected gasescause greater by-product distribution at edges of the substrate whileside-injected gases cause less by-product distribution at edges of thesubstrate.

Accordingly, processing may begin with the edge ring in a first positionand with respective center-injected and side-injected gas flow rates,resulting in relatively greater by-product distribution in the edgeregion of the substrate and relatively less by-product distribution inthe center region of the substrate. The system controller 160 may thencause the edge ring to be lowered (or raised) to a second position whilealso adjusting respective flow rates of the center-injected andside-injected gases. For example, the edge ring may be lowered whiledecreasing (or completely shutting off) the flow rate of thecenter-injected gas and increasing the flow rate of the side-injectedgas, resulting in relatively less by-product distribution in the edgeregion of the substrate and relatively greater by-product distributionin the center region of the substrate. Adjusting the respective flowrates may include completely turning off the center-injected orside-injected gas flow, beginning processing with the center-injected orside-injected gas flow turned off and subsequently turning on thecenter-injected or side-injected gas flow, etc.

In some examples, the controller 160 may be configured to perform asequence of predetermined adjustments for a particular process. Forexample, in a first predetermined period, the controller 160 may adjustthe edge ring to a first height while selecting first respectivecenter-injected and side-injected gas flow rates. In a secondpredetermined period, the controller 160 may adjust the edge ring to asecond height while selecting second respective center-injected andside-injected gas flow rates. In this manner, a process or processingstep may be segmented into two or more predetermined periods havingrespective edge ring positions and gas flow rates.

Referring now to FIGS. 4A, 4B, and 4C, a substrate support 400 having asubstrate 404 arranged thereon according to the principles of thepresent disclosure is shown. The substrate support 400 may include abase or pedestal having an inner portion (e.g., corresponding to an ESC)408 and an outer portion 412. In examples, the outer portion 412 may beindependent from, and moveable in relation to, the inner portion 408.The substrate 404 is arranged on the inner portion 408 for processing. Acontroller 416 communicates with one or more actuators 420 toselectively raise and lower edge rings 424 to adjust a pocket depth ofthe support 400. For example only, the edge ring 424 is shown in a fullylowered position in FIG. 4A and in an example fully raised position inFIG. 4B. As shown, the actuators 420 correspond to pin actuatorsconfigured to selectively extend and retract pins 428 in a verticaldirection. Other suitable types of actuators may be used in otherexamples. For example only, the edge ring 424 corresponds to a ceramicor quartz edge ring. In FIG. 4A, the controller 416 communicates withthe actuators 420 to directly raise and lower the edge ring 424 via thepins 428. In some examples, the inner portion 408 is moveable relativeto the edge ring 424.

Referring now to FIGS. 5A and 5B, an example substrate support 500having a substrate 504 arranged thereon is shown. The substrate support500 includes a base or pedestal having an inner portion 508 and an outerportion 512. The outer portion includes an edge ring 516 that isselectively moveable (i.e., raised and lowered) as described above withrespect to FIGS. 1-4. However, portions of the substrate support 500related to controlling movement of the edge ring 516 are omitted fromFIG. 5 for simplicity.

The substrate support 500 is positioned below a gas distribution devicesuch as a showerhead 520. The showerhead 520 includes a center portion524 and may optionally include an outer portion 528. The center portion524 includes center gas nozzles 532 arranged to direct process gasesdownward directly above the substrate 504. The outer portion 520 mayinclude side-tuning gas nozzles 536 arranged to direct process gasestoward outer edges of the substrate 504.

In some examples, the edge ring 516 includes edge ring nozzles 540. Theedge ring nozzles 540 may be provided instead of or in addition toside-tuning gas nozzles 536 in the outer portion 528 of the showerhead520. The edge ring nozzles 540 are arranged to provide additionalside-tuning gases to further control by-product distribution asdescribed above in FIGS. 1-3. For example, the edge ring 516 may definea plenum 544 arranged to receive, via one or more conduits 548, gasesfrom gas source(s) 552. For example, the gas source(s) 552 provideprocess gases in accordance with control signals generated by acontroller (e.g., the system controller 160 of FIG. 1) as describedabove.

Characteristics of the edge ring nozzles 540 may differ for differentprocesses, processing chambers, etc. Example characteristics of the edgering nozzles 540 that may be modified include, but are not limited to,quantity, size, shape, and injection angle. Accordingly, in addition toadjusting edge ring position, gas flow, etc., by-product distributioncan be further controlled by selecting an edge ring with edge ringnozzles 540 having desired characteristics. In some examples, a shape ofthe edge ring 516 may vary to further control by-product distribution.For example, although shown with a rectangular inner diameter 556, theinner diameter 556 may be beveled, curved, etc. in other examples.

Referring now to FIG. 6, an example method 600 for controllingby-product distribution across a substrate begins at 604. At 608, themethod 600 (e.g., the system controller 160) sets adjustable parametersof a process chamber based on a selected process, processing step, etc.For example, the method 600 may set the adjustable parameters accordingto stored data associating characteristics of a selected process (e.g.,process type, gas species, edge ring characteristics, etc.) with variousadjustable parameters. The parameters include, but are not limited to,edge ring position and respective gas flow rates for center-injectedprocess gases and side-injected process gases (e.g., injected from aside-tuning portion of a showerhead and/or from edge ring nozzles of anedge ring).

At 612, the method 600 begins a process or processing step. At 616, themethod 600 determines whether the processing step is complete. If true,the method 600 ends at 620. If false, the method 600 continues to 624.At 624, the method 600 determines whether to adjust parameters relatedto control of by-product distribution as described above with respect toFIGS. 1-5. For example, the method 600 may adjust edge ring positionand/or process gas flow rates after a predetermined period, based on acalculation or estimate of by-product distribution during the process,etc. If true, the method 600 continues to 628. If false, the method 600continues to 616.

At 628, the method 600 (e.g., the system controller 160) adjusts theedge ring position and/or gas flow rates. In some examples, the method600 adjusts the edge ring position and the gas flow rates topredetermined values (e.g., based on a time elapsed since theprocess/processing step began). In other examples, the method 600 maycalculate or estimate (e.g., based on current and previous edge ringpositions, gas flow rates, etc.) by-product distribution in variousregions of the substrate and adjust the edge ring position and/or gasflow rates accordingly. The method 600 then continues to 616.

The foregoing description is merely illustrative in nature and is in noway intended to limit the disclosure, its application, or uses. Thebroad teachings of the disclosure can be implemented in a variety offorms. Therefore, while this disclosure includes particular examples,the true scope of the disclosure should not be so limited since othermodifications will become apparent upon a study of the drawings, thespecification, and the following claims. It should be understood thatone or more steps within a method may be executed in different order (orconcurrently) without altering the principles of the present disclosure.Further, although each of the embodiments is described above as havingcertain features, any one or more of those features described withrespect to any embodiment of the disclosure can be implemented in and/orcombined with features of any of the other embodiments, even if thatcombination is not explicitly described. In other words, the describedembodiments are not mutually exclusive, and permutations of one or moreembodiments with one another remain within the scope of this disclosure.

Spatial and functional relationships between elements (for example,between modules, circuit elements, semiconductor layers, etc.) aredescribed using various terms, including “connected,” “engaged,”“coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and“disposed.” Unless explicitly described as being “direct,” when arelationship between first and second elements is described in the abovedisclosure, that relationship can be a direct relationship where noother intervening elements are present between the first and secondelements, but can also be an indirect relationship where one or moreintervening elements are present (either spatially or functionally)between the first and second elements. As used herein, the phrase atleast one of A, B, and C should be construed to mean a logical (A OR BOR C), using a non-exclusive logical OR, and should not be construed tomean “at least one of A, at least one of B, and at least one of C.”

In some implementations, a controller is part of a system, which may bepart of the above-described examples. Such systems can comprisesemiconductor processing equipment, including a processing tool ortools, chamber or chambers, a platform or platforms for processing,and/or specific processing components (a wafer pedestal, a gas flowsystem, etc.). These systems may be integrated with electronics forcontrolling their operation before, during, and after processing of asemiconductor wafer or substrate. The electronics may be referred to asthe “controller,” which may control various components or subparts ofthe system or systems. The controller, depending on the processingrequirements and/or the type of system, may be programmed to control anyof the processes disclosed herein, including the delivery of processinggases, temperature settings (e.g., heating and/or cooling), pressuresettings, vacuum settings, power settings, radio frequency (RF)generator settings, RF matching circuit settings, frequency settings,flow rate settings, fluid delivery settings, positional and operationsettings, wafer transfers into and out of a tool and other transfertools and/or load locks connected to or interfaced with a specificsystem.

Broadly speaking, the controller may be defined as electronics havingvarious integrated circuits, logic, memory, and/or software that receiveinstructions, issue instructions, control operation, enable cleaningoperations, enable endpoint measurements, and the like. The integratedcircuits may include chips in the form of firmware that store programinstructions, digital signal processors (DSPs), chips defined asapplication specific integrated circuits (ASICs), and/or one or moremicroprocessors, or microcontrollers that execute program instructions(e.g., software). Program instructions may be instructions communicatedto the controller in the form of various individual settings (or programfiles), defining operational parameters for carrying out a particularprocess on or for a semiconductor wafer or to a system. The operationalparameters may, in some embodiments, be part of a recipe defined byprocess engineers to accomplish one or more processing steps during thefabrication of one or more layers, materials, metals, oxides, silicon,silicon dioxide, surfaces, circuits, and/or dies of a wafer.

The controller, in some implementations, may be a part of or coupled toa computer that is integrated with the system, coupled to the system,otherwise networked to the system, or a combination thereof. Forexample, the controller may be in the “cloud” or all or a part of a fabhost computer system, which can allow for remote access of the waferprocessing. The computer may enable remote access to the system tomonitor current progress of fabrication operations, examine a history ofpast fabrication operations, examine trends or performance metrics froma plurality of fabrication operations, to change parameters of currentprocessing, to set processing steps to follow a current processing, orto start a new process. In some examples, a remote computer (e.g. aserver) can provide process recipes to a system over a network, whichmay include a local network or the Internet. The remote computer mayinclude a user interface that enables entry or programming of parametersand/or settings, which are then communicated to the system from theremote computer. In some examples, the controller receives instructionsin the form of data, which specify parameters for each of the processingsteps to be performed during one or more operations. It should beunderstood that the parameters may be specific to the type of process tobe performed and the type of tool that the controller is configured tointerface with or control. Thus as described above, the controller maybe distributed, such as by comprising one or more discrete controllersthat are networked together and working towards a common purpose, suchas the processes and controls described herein. An example of adistributed controller for such purposes would be one or more integratedcircuits on a chamber in communication with one or more integratedcircuits located remotely (such as at the platform level or as part of aremote computer) that combine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber ormodule, a deposition chamber or module, a spin-rinse chamber or module,a metal plating chamber or module, a clean chamber or module, a beveledge etch chamber or module, a physical vapor deposition (PVD) chamberor module, a chemical vapor deposition (CVD) chamber or module, anatomic layer deposition (ALD) chamber or module, an atomic layer etch(ALE) chamber or module, an ion implantation chamber or module, a trackchamber or module, and any other semiconductor processing systems thatmay be associated or used in the fabrication and/or manufacturing ofsemiconductor wafers.

As noted above, depending on the process step or steps to be performedby the tool, the controller might communicate with one or more of othertool circuits or modules, other tool components, cluster tools, othertool interfaces, adjacent tools, neighboring tools, tools locatedthroughout a factory, a main computer, another controller, or tools usedin material transport that bring containers of wafers to and from toollocations and/or load ports in a semiconductor manufacturing factory.

What is claimed is:
 1. A substrate processing system, comprising: asubstrate support including an inner portion positioned below a gasdistribution device configured to direct first process gases toward theinner portion, and an outer portion including an edge ring, wherein theedge ring is positioned around an outer perimeter of the inner portionto at least partially surround the inner portion and a substratearranged on the inner portion, wherein the edge ring is configured to beraised and lowered relative to the inner portion, and wherein the edgering is configured to direct second process gases toward the innerportion; and a controller configured to, during processing of thesubstrate, calculate a distribution of etch by-product materialredeposited onto the substrate based on data that associates thedistribution of etch by-product material redeposited onto the substratewith at least one of edge ring position, the first process gasesdirected by the gas distribution device, and the second process gasesdirected by the edge ring, and in response to the calculateddistribution, (i) selectively adjust a position of the edge ring and(ii) selectively adjust flow of at least one of the first process gasesand the second process gases.
 2. The substrate processing system ofclaim 1, wherein the data includes an average of (i) etch by-productmaterial deposited on the substrate caused by the first process gasesand (ii) etch by-product material deposited on the substrate caused bythe second process gases.
 3. The substrate processing system of claim 1,wherein the controller, based on the data, (i) adjusts the position ofthe edge ring to a first position, adjusts flow of the first processgases to a first flow rate, and adjusts flow of the second process gasesto a second flow rate for a first predetermined period, and (ii)subsequent to the first predetermined period, adjusts the position ofthe edge ring to a second position, adjusts the flow of the firstprocess gases to a third flow rate, and adjusts the flow of the secondprocess gases to a fourth flow rate for a second predetermined period.4. The substrate processing system of claim 3, wherein adjusting theflow to at least one of the first flow rate, the second flow rate, thethird flow rate, and the fourth flow rate includes turning off acorresponding one of the first process gases and the second processgases.
 5. The substrate processing system of claim 1, wherein the edgering includes a plurality of gas injection nozzles.
 6. The substrateprocessing system of claim 5, wherein the plurality of gas injectionnozzles are in fluid communication with a source of the second processgases via a plenum defined with the edge ring and at least one conduitcoupled to the source.
 7. A method for processing a substrate in asubstrate processing system, the method comprising: providing asubstrate support having an inner portion and an outer portion, whereinthe inner portion positioned below a gas distribution device, andwherein the outer portion includes an edge ring positioned around anouter perimeter of the inner portion to at least partially surround theinner portion and a substrate arranged on the inner portion; directingfirst process gases toward the inner portion using the gas distributiondevice; directing second process gases toward the inner portion usingthe edge ring; and during processing of the substrate, calculating adistribution of etch by-product material redeposited onto the substratebased on data that associates the distribution of etch by-productmaterial redeposited onto the substrate with at least one of edge ringposition, the first process gases directed by the gas distributiondevice, and the second process gases directed by the edge ring, and inresponse to the calculated distribution, selectively adjusting aposition of the edge ring upward or downward relative to the innerportion and selectively adjusting flow of at least one of the firstprocess gases and the second process gases.
 8. The method of claim 7,wherein the data includes an average of (i) etch by-product materialdeposited on the substrate caused by the first process gases and (ii)etch by-product material deposited on the substrate caused by the secondprocess gases.
 9. The method of claim 7, further comprising, based onthe data, (i) adjusting the position of the edge ring to a firstposition, adjusting flow of the first process gases to a first flowrate, and adjusting flow of the second process gases to a second flowrate for a first predetermined period, and (ii) subsequent to the firstpredetermined period, adjusting the position of the edge ring to asecond position, adjusting the flow of the first process gases to athird flow rate, and adjusting the flow of the second process gases to afourth flow rate for a second predetermined period.
 10. The method ofclaim 9, wherein adjusting the flow to at least one of the first flowrate, the second flow rate, the third flow rate, and the fourth flowrate includes turning off a corresponding one of the first process gasesand the second process gases.
 11. The method of claim 7, wherein theedge ring includes a plurality of gas injection nozzles.
 12. The methodof claim 11, wherein the plurality of gas injection nozzles are in fluidcommunication with a source of the second process gases via a plenumdefined with the edge ring and at least one conduit coupled to thesource.